IXFR120N20 isoplus247 equivalent, hiperfettm power mosfets isoplus247.
W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to.
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
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Characteristic Valu.
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